DC AND RF CHARACTERISTIC OF HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) ON AlGaN/GaN/Si FOR POWER APPLICATIONS

NULL

Countries | Regions

Countries | Regions

Article Types

Article Types

Year

—

Volume

Issue

Pages

—

Search

Home / Volume 13 / Issue 4 / pii/1304211

Journal Browser

Volume | Year

Issue

Search

Article

DC AND RF CHARACTERISTIC OF HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) ON AlGaN/GaN/Si FOR POWER APPLICATIONS

MOUJAHED GASSOUMI , A. HELALI , MALEK GASSOUMI , C. GAQUIÈRE , H. MAAREF

J. Ovonic. Res. 2017 , 13(4), 211–217;

Previous article in this issue

Next article in this issue

Share

Back to top