Article
A SIMULATION MODEL APPROACH TO ANALYSIS OF HIGH BREAKDOWN VOLTAGE IN NORMALLY-OFF 4H-SiC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR
M.
KHALID
,
J. K.
KHAN
,
A. D.
CHANDIO
,
Z. A.
GILANI
,
H. M. N. UL H.
KHAN ASGHAR
,
S.
RIAZ
,
S.
NASEEM
J. Ovonic. Res. 2018
, 14(6),
459–465;