Article
DESIGN AND ANALYSIS OF NORMALLY-ON 4H-SiC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR (VJFET) USING SENTAURUS TCAD SIMULATION
M.
KHALID
,
J. K.
KHAN
,
G.
MUSTAFA
,
M. S.
AKHTAR
,
Z. A.
GILANI
,
H. M. N.
UL HUDA KHAN ASGHAR
,
S.
RIAZ
,
S.
NASEEM
J. Ovonic. Res. 2019
, 15(5),
335–343;
