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Volume 18
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Issue 3
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DOI: 10.15251/JOR.2022.183.411
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Influence of double InGaAs/InAs channel on DC and RF performances of InP-based HEMTs
H. L. Hao
,
M. Y. Su
,
H. T. Wu
,
H. Y. Mei
,
R. X. Yao
,
F. Liu
,
H. Wen
,
S. X. Sun
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J. Ovonic. Res.
2022
, 18(3), 411–419;
https://doi.org/10.15251/JOR.2022.183.411
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