Study of the effect of the gate’s length on the electrical quality of AlGaN/GaN heterostructures based HEMTs

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Home / Volume 21 / Issue 4 / DOI: 10.15251/JOR.2025.214.495

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Study of the effect of the gate’s length on the electrical quality of AlGaN/GaN heterostructures based HEMTs

J. Ovonic. Res. 2025 , 21(4), 495–504; https://doi.org/10.15251/JOR.2025.214.495